Nexperia PMV20XNE Type N-Channel MOSFET, 7.2 A, 30 V Enhancement, 3-Pin SOT-23 PMV20XNER
- RS-stocknr.:
- 170-5372
- Fabrikantnummer:
- PMV20XNER
- Fabrikant:
- Nexperia
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 25 eenheden)*
€ 7,10
(excl. BTW)
€ 8,60
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
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- Verzending 3.000 stuk(s) vanaf 03 juni 2026
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 25 - 225 | € 0,284 | € 7,10 |
| 250 - 600 | € 0,126 | € 3,15 |
| 625 - 1225 | € 0,124 | € 3,10 |
| 1250 - 2475 | € 0,12 | € 3,00 |
| 2500 + | € 0,118 | € 2,95 |
*prijsindicatie
- RS-stocknr.:
- 170-5372
- Fabrikantnummer:
- PMV20XNER
- Fabrikant:
- Nexperia
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Nexperia | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 7.2A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | PMV20XNE | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 38mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 6.94W | |
| Typical Gate Charge Qg @ Vgs | 12.4nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 3mm | |
| Width | 1.4 mm | |
| Height | 1mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Nexperia | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 7.2A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series PMV20XNE | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 38mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 6.94W | ||
Typical Gate Charge Qg @ Vgs 12.4nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 3mm | ||
Width 1.4 mm | ||
Height 1mm | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
Robust interfacing between asynchronous and synchronous systems. Flip-flops are Basic storage elements in digital electronics. By only allowing the output to change on an edge transition, flip-flops provide a robust Interface between asynchronous and synchronous systems. With a choice of either positive or negative edge triggered options they provide added design flexibility.
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Trench MOSFET technology
Low threshold voltage
Enhanced power dissipation capability of 1200 mW
ElectroStatic Discharge (ESD) protection: 2 kV HBM
Target applications
Relay driver
High-speed line driver
Low-side load switch
Switching circuits
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