ROHM QH8MA3 Dual N/P-Channel MOSFET, 5.5 (P Channel) A, 7 (N Channel) A, 30 V, 8-Pin TSMT QH8MA3TCR

Bekijk alle MOSFETs
Niet beschikbaar
RS heeft dit product niet meer op voorraad.
Verpakkingsopties
RS-stocknr.:
172-0438
Fabrikantnummer:
QH8MA3TCR
Fabrikant:
ROHM
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren

Merk

ROHM

Channel Type

N, P

Maximum Continuous Drain Current

5.5 (P Channel) A, 7 (N Channel) A

Maximum Drain Source Voltage

30 V

Package Type

TSMT

Series

QH8MA3

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

46 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5 (N Channel) V, 2.5 (P Channel) V

Minimum Gate Threshold Voltage

1 (N Channel) V, 1 (P Channel) V

Maximum Power Dissipation

2.5 W

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

2

Width

2.5mm

Typical Gate Charge @ Vgs

7.2 nC @ 10 V

Maximum Operating Temperature

+150 °C

Length

3.1mm

Forward Diode Voltage

1.2V

Height

0.8mm

The Middle Power MOSFET QH8MA3 is suitable for switching power supply.

Low on - resistance.
Small Surface Mount Package (TSMT8).
Pb-free lead plating.
Halogen Free

Gerelateerde Links