onsemi Dual NVMFD5C680NL 2 Type N-Channel MOSFET, 26 A, 60 V Enhancement, 8-Pin DFN NVMFD5C680NLT1G
- RS-stocknr.:
- 172-3375
- Fabrikantnummer:
- NVMFD5C680NLT1G
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 25 eenheden)*
€ 30,475
(excl. BTW)
€ 36,875
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 1.500 stuk(s) vanaf 12 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 25 - 75 | € 1,219 | € 30,48 |
| 100 - 225 | € 1,051 | € 26,28 |
| 250 + | € 0,911 | € 22,78 |
*prijsindicatie
- RS-stocknr.:
- 172-3375
- Fabrikantnummer:
- NVMFD5C680NLT1G
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 26A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | NVMFD5C680NL | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 41mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 5nC | |
| Maximum Power Dissipation Pd | 19W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.9V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Transistor Configuration | Dual | |
| Length | 6.1mm | |
| Height | 1.05mm | |
| Width | 5.1 mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 26A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series NVMFD5C680NL | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 41mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 5nC | ||
Maximum Power Dissipation Pd 19W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.9V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Transistor Configuration Dual | ||
Length 6.1mm | ||
Height 1.05mm | ||
Width 5.1 mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. MOSFET and PPAP capable suitable for automotive applications.
Small Footprint (5x6 mm)
Compact Design
Low rDS(on)
Minimize Conduction Loss
Low QG and Capacitance
Minimize Driver Losses
NVMFD5C446NLWF − Wettable Flank Option
Enhanced Optical Inspection
PPAP Capable
Applications
Solenoid driver
Low side / high side driver
Automotive engine controllers
Antilock braking systems
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