onsemi FCPF Type N-Channel MOSFET, 44 A, 650 V Enhancement, 3-Pin TO-220

RS-stocknr.:: 172-3426
Fabrikantnummer:: FCPF067N65S3
Fabrikant:: onsemi

onsemi FCPF Type N-Channel MOSFET, 44 A, 650 V Enhancement, 3-Pin TO-220

Subtotaal (1 tube van 1000 eenheden)*

€ 2.739,00

(excl. BTW)

€ 3.314,00

(incl. BTW)

Informatie over voorraden is momenteel niet toegankelijk

Aantal stuks	Per stuk	Per tube*
1000 +	€ 2,739	€ 2.739,00

*prijsindicatie

RS-stocknr.:: 172-3426
Fabrikantnummer:: FCPF067N65S3
Fabrikant:: onsemi

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	onsemi
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	44A
	Maximum Drain Source Voltage Vds	650V
	Series	FCPF
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	67mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	78nC
	Maximum Gate Source Voltage Vgs	30 V
	Maximum Power Dissipation Pd	46W
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Width	4.9 mm
	Height	16.07mm
	Standards/Approvals	No
	Length	10.36mm
	Automotive Standard	No

	Alles selecteren
	Merk onsemi
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 44A
	Maximum Drain Source Voltage Vds 650V
	Series FCPF
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 67mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 78nC
	Maximum Gate Source Voltage Vgs 30 V
	Maximum Power Dissipation Pd 46W
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Width 4.9 mm
	Height 16.07mm
	Standards/Approvals No
	Length 10.36mm
	Automotive Standard No

Land van herkomst:: CN

SuperFET® III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SuperFET III MOSFET is very suitable for various power system for miniaturization and higher efficiency.

700 V @ TJ = 150 oC

Higher system reliability at low temperature operation

Ultra Low Gate Charge (Typ. Qg = 78 nC)

Lower switching loss

Low Effective Output Capacitance (Typ. Coss(eff.) = 715 pF)

Lower switching loss

Optimized Capacitance

Lower peak Vds and lower Vgs oscillation

Typ. RDS(on) = 62 mΩ

Wave soldering guarantee

Computing

Telecomunication

Industrial

Telecom / Server

Solar inverter / UPS

onsemi FCPF Type N-Channel MOSFET, 44 A, 650 V Enhancement, 3-Pin TO-220

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