Fabrikantnummer

onsemi FCB Type N-Channel MOSFET, 14 A, 650 V Enhancement, 3-Pin TO-263 FCB199N65S3

RS-stocknr.:: 172-4630
Fabrikantnummer:: FCB199N65S3
Fabrikant:: onsemi

onsemi FCB Type N-Channel MOSFET, 14 A, 650 V Enhancement, 3-Pin TO-263 FCB199N65S3

Bulkkorting beschikbaar

Subtotaal (1 verpakking van 10 eenheden)*

€ 25,96

(excl. BTW)

€ 31,41

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 75,00

Tijdelijk niet op voorraad

Verzending vanaf 08 mei 2026

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk	Per verpakking*
10 - 90	€ 2,596	€ 25,96
100 - 240	€ 2,238	€ 22,38
250 +	€ 1,94	€ 19,40

*prijsindicatie

RS-stocknr.:: 172-4630
Fabrikantnummer:: FCB199N65S3
Fabrikant:: onsemi

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	onsemi
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	14A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-263
	Series	FCB
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	199mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	30nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	98W
	Maximum Gate Source Voltage Vgs	30 V
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Height	4.83mm
	Standards/Approvals	No
	Width	9.65 mm
	Length	10.67mm
	Automotive Standard	No

	Alles selecteren
	Merk onsemi
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 14A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-263
	Series FCB
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 199mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 30nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 98W
	Maximum Gate Source Voltage Vgs 30 V
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Height 4.83mm
	Standards/Approvals No
	Width 9.65 mm
	Length 10.67mm
	Automotive Standard No

Land van herkomst:: CN

SuperFET® III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SuperFET III MOSFET is very suitable for various power system for miniaturization and higher efficiency.

700 V @ TJ = 150 oC

Higher system reliability at low temperature operation

Ultra Low Gate Charge (Typ. Qg = 30 nC)

Lower switching loss

Low Effective Output Capacitance (Typ. Coss(eff.) = 277 pF)

Lower switching loss

Optimized Capacitance

Lower peak Vds and lower Vgs oscillation

Internal Gate resistance: 7.0 ohm

Lower peak Vds and lower Vgs oscillation

Typ. RDS(on) = 170 mΩ

onsemi FCB Type N-Channel MOSFET, 14 A, 650 V Enhancement, 3-Pin TO-263 FCB199N65S3

GRATIS bezorging voor bestellingen van meer dan € 75,00

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