onsemi Type N-Channel MOSFET, 40 A, 650 V Enhancement, 3-Pin TO-263 NVB082N65S3F
- RS-stocknr.:
- 186-1481
- Fabrikantnummer:
- NVB082N65S3F
- Fabrikant:
- onsemi
Subtotaal (1 verpakking van 2 eenheden)*
€ 6,84
(excl. BTW)
€ 8,28
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Laatste voorraad RS
- Laatste 726 stuk(s), klaar voor verzending vanaf een andere locatie
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 + | € 3,42 | € 6,84 |
*prijsindicatie
- RS-stocknr.:
- 186-1481
- Fabrikantnummer:
- NVB082N65S3F
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 82mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 81nC | |
| Maximum Power Dissipation Pd | 313W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.58mm | |
| Length | 10.67mm | |
| Standards/Approvals | No | |
| Width | 9.65 mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 82mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 81nC | ||
Maximum Power Dissipation Pd 313W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Operating Temperature 150°C | ||
Height 4.58mm | ||
Length 10.67mm | ||
Standards/Approvals No | ||
Width 9.65 mm | ||
Automotive Standard AEC-Q101 | ||
Niet conform
SUPERFET® III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power system for miniaturization and higher efficiency. SUPERFET III FRFET® MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability.
700 V @ TJ = 150°C
Typ. RDS(on) = 64 m
Ultra Low Gate Charge (Typ. Qg = 81 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 722 pF)
These Devices are Pb−Free
Typical Applications
Automotive On Board Charger
Automotive DC/DC Converter for HEV
Gerelateerde Links
- onsemi Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263
- onsemi Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263
- onsemi Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263
- onsemi Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263
- onsemi Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263
- onsemi Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263 NTB095N65S3HF
- onsemi Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263 NVB190N65S3F
- onsemi Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263 NTB110N65S3HF