onsemi Single SiC Power Module, 28 A, 3-Pin TO-220
- RS-stocknr.:
- 172-8780
- Fabrikantnummer:
- FFSP3065A
- Fabrikant:
- onsemi
Momenteel niet beschikbaar
We weten niet of dit item nog op voorraad komt, RS is van plan dit binnenkort uit ons assortiment te halen.
- RS-stocknr.:
- 172-8780
- Fabrikantnummer:
- FFSP3065A
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | SiC Power Module | |
| Maximum Continuous Drain Current Id | 28A | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 240W | |
| Forward Voltage Vf | 2.4V | |
| Maximum Operating Temperature | 175°C | |
| Transistor Configuration | Single | |
| Length | 10.67mm | |
| Width | 4.8 mm | |
| Height | 16.51mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type SiC Power Module | ||
Maximum Continuous Drain Current Id 28A | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 240W | ||
Forward Voltage Vf 2.4V | ||
Maximum Operating Temperature 175°C | ||
Transistor Configuration Single | ||
Length 10.67mm | ||
Width 4.8 mm | ||
Height 16.51mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 30 A, 650 V, D1, TO-220-2L
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 30 A, 650 V, D1, TO-220-2L
The ON Semiconductor TO-220-2L silicon carbide (SiC) Schottky diode is the latest product that uses a completely new technology that provides superior switching performance and higher reliability to silicon. The diode has many advanced features like temperature independent switching characteristics and excellent thermal performance that makes it undoubtedly the next-generation power semiconductor. This diode offers many benefits that include the highest efficiency, faster-operating frequency, increased power density, reduced EMI and reduced system size and cost.
Features and Benefits
• Avalanche rated 180mJ
• Ease of paralleling
• High surge current capacity
• No reverse recovery/no forward recovery
• Operating temperature ranges between -55°C and 175°C
• Positive temperature coefficient
Applications
• EV charger
• General purpose
• Industrial power
• PFC
• Power switching circuits
• SMPS
• Solar inverter
• UPS
• Welding
Certifications
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
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