N-Channel MOSFET, 203 A, 80 V, 5-Pin DFN onsemi NTMFS6H800NT1G

The ON Semiconductor DFN5 surface mount N-channel MOSFET is a new age product with a drain-source voltage of 80V and a maximum gate-source voltage of 20V. It has drain-source resistance of 2.1mohm at a gate-source voltage of 10V. It has continuous drain current of 203A and maximum power dissipation of 200W. The minimum and a maximum driving voltage for this transistor are 6V and 10V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

• Compact design
• Lead (Pb) free
• Low QG and capacitance
• Low QG and capacitance to minimize driver losses
• Low RDS (on) to minimize conduction losses
• Minimize conduction losses
• Minimize driver losses
• Operating temperature ranges between -55°C and 175°C
• Small footprint (5x6 mm)

• 48V systems
• DC/DC converter
• Load switch
• Motor control
• Power switches (high side driver, low side driver, H-bridges etc.)
• Switching power supplies
• Synchronous rectifier

• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007