Microchip Single TN0110 1 N-Channel MOSFET, 350 mA, 100 V Enhancement, 3-Pin TO-92 TN0110N3-G
- RS-stocknr.:
- 177-9742P
- Fabrikantnummer:
- TN0110N3-G
- Fabrikant:
- Microchip
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We weten niet of dit item nog op voorraad komt, RS is van plan dit binnenkort uit ons assortiment te halen.
- RS-stocknr.:
- 177-9742P
- Fabrikantnummer:
- TN0110N3-G
- Fabrikant:
- Microchip
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
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Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Microchip | |
| Transistor Configuration | Single | |
| Series | TN0110 | |
| Number of Elements per Chip | 1 | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current (Id) | 350 mA | |
| Maximum Drain Source Voltage (Vds) | 100 V | |
| Channel Mode | Enhancement | |
| Pin Count | 3 | |
| Package Type | TO-92 | |
| Forward Voltage (Vf) | 1.5 V | |
| Height | 5.33 mm | |
| Length | 5.08 mm | |
| Maximum Drain Source Resistance (Rds) | 4.5 Ω | |
| Maximum Gate Source Voltage (Vgs) | 20 V | |
| Maximum Operating Temperature | 150 °C | |
| Maximum Power Dissipation (Pd) | 1 W | |
| Minimum Operating Temperature | -55 °C | |
| Mount Type | Through Hole | |
| Width | 4.06 mm | |
| Alles selecteren | ||
|---|---|---|
Merk Microchip | ||
Transistor Configuration Single | ||
Series TN0110 | ||
Number of Elements per Chip 1 | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current (Id) 350 mA | ||
Maximum Drain Source Voltage (Vds) 100 V | ||
Channel Mode Enhancement | ||
Pin Count 3 | ||
Package Type TO-92 | ||
Forward Voltage (Vf) 1.5 V | ||
Height 5.33 mm | ||
Length 5.08 mm | ||
Maximum Drain Source Resistance (Rds) 4.5 Ω | ||
Maximum Gate Source Voltage (Vgs) 20 V | ||
Maximum Operating Temperature 150 °C | ||
Maximum Power Dissipation (Pd) 1 W | ||
Minimum Operating Temperature -55 °C | ||
Mount Type Through Hole | ||
Width 4.06 mm | ||
- Land van herkomst:
- TW
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Low threshold - 2.0V max.
High input impedance
Low input capacitance - 50pF typical
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage