Microchip 2N6661 Type N-Channel MOSFET, 350 mA, 90 V Enhancement, 3-Pin TO-39 2N6661

RS-stocknr.:: 177-9750
Fabrikantnummer:: 2N6661
Fabrikant:: Microchip

Microchip 2N6661 Type N-Channel MOSFET, 350 mA, 90 V Enhancement, 3-Pin TO-39 2N6661

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RS-stocknr.:: 177-9750
Fabrikantnummer:: 2N6661
Fabrikant:: Microchip

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Microchip
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	350mA
	Maximum Drain Source Voltage Vds	90V
	Series	2N6661
	Package Type	TO-39
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	5Ω
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	6.25W
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	0.9V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Height	6.6mm
	Automotive Standard	No

	Alles selecteren
	Merk Microchip
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 350mA
	Maximum Drain Source Voltage Vds 90V
	Series 2N6661
	Package Type TO-39
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 5Ω
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 6.25W
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 0.9V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Height 6.6mm
	Automotive Standard No

Datasheet

Microchip Technology MOSFET

The Microchip Technology through-hole mount N-channel MOSFET is a new age product with a drain-source voltage of 90V and a maximum gate-source voltage of 20V. It has drain-source resistance of 4ohms at a gate-source voltage of 10V. It has continuous drain current of 350mA and maximum power dissipation of 6.25W. The minimum and a maximum driving voltage for this MOSFET is 5V and 10V respectively. The MOSFET is an enhancement mode (normally off) MOSFET that utilizes a vertical DMOS structure and well-proven, silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. A significant characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. This vertical DMOS FET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Ease of paralleling

• Excellent thermal stability

• Free from secondary breakdown

• High input impedance and high gain

• Integral source drain diode

• Low CISS and fast switching speeds

• Low power drive requirement

• Operating temperature ranges between -55°C and 150°C

Applications

• Amplifiers

• Converters

• Drivers: relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.

• Motor controls

• Power supply circuits

• Switches

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007