Vishay IRFPG50 Type N-Channel Power MOSFET, 6.1 A, 1 kV Enhancement, 3-Pin TO-247AC

RS-stocknr.:: 178-0788
Fabrikantnummer:: IRFPG50PBF
Fabrikant:: Vishay

Vishay IRFPG50 Type N-Channel Power MOSFET, 6.1 A, 1 kV Enhancement, 3-Pin TO-247AC

Bulkkorting beschikbaar

Bekijk bulkkorting

Subtotaal (1 tube van 25 eenheden)*

€ 91,50

(excl. BTW)

€ 110,75

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 90,00

Op voorraad

500 stuk(s) klaar voor verzending vanaf een andere locatie

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk	Per tube*
25 - 25	€ 3,66	€ 91,50
50 - 100	€ 3,55	€ 88,75
125 +	€ 3,404	€ 85,10

*prijsindicatie

RS-stocknr.:: 178-0788
Fabrikantnummer:: IRFPG50PBF
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Product Type	Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	6.1A
	Maximum Drain Source Voltage Vds	1kV
	Package Type	TO-247AC
	Series	IRFPG50
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	2Ω
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	190W
	Maximum Gate Source Voltage Vgs	20V
	Typical Gate Charge Qg @ Vgs	190nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.8V
	Maximum Operating Temperature	150°C
	Length	15.87mm
	Height	20.7mm
	Standards/Approvals	RoHS
	Width	5.31mm
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Product Type Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 6.1A
	Maximum Drain Source Voltage Vds 1kV
	Package Type TO-247AC
	Series IRFPG50
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 2Ω
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 190W
	Maximum Gate Source Voltage Vgs 20V
	Typical Gate Charge Qg @ Vgs 190nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.8V
	Maximum Operating Temperature 150°C
	Length 15.87mm
	Height 20.7mm
	Standards/Approvals RoHS
	Width 5.31mm
	Automotive Standard No

Datasheet

Vishay IRFPG50 Series Power MOSFET, 1000V Drain Source Voltage, 6.1A Continuous Drain Current - IRFPG50PBF

This power MOSFET is a high-voltage N-channel enhancement device designed for power switching and control in industrial electronics. It is supplied for through-hole mounting in a TO-247AC package and is suitable for applications that require substantial voltage hold-off and thermal headroom while operating across a wide ambient temperature range.

Features and Benefits:

• Withstands up to 1000V for high-voltage switching applications
• Continuous drain current rating of 6.1 A enables sustained load handling
• Drain-source on-resistance of 2 Ω reduces conduction losses under load
• Maximum power dissipation of 190W allows higher power throughput
• Typical gate charge of 190 nC supports predictable switching behaviour
• Gate-source limit of 20V protects the gate from excessive drive voltage

Applications

• Suitable for high-voltage motor-drive stages in automation systems
• Ideal for switching supplies requiring robust voltage margins
• Used with power converters in industrial electrical control panels
• Can be used for load switching in mechanical actuation systems

What mounting method is required for installation?

It requires a through-hole mounting approach and is supplied in a TO-247AC style package that is compatible with standard through-hole heatsinking arrangements.

How does it behave in extreme temperature environments?

It is specified to operate from -55 °C up to 150 °C, providing capability for use in both sub-zero and elevated-temperature conditions without derating outside those limits.

What are the gate-drive constraints to observe?

The maximum permissible gate-source voltage is 20 V, so gate-drive circuitry should be designed to avoid exceeding this threshold.

What thermal management considerations are necessary?

With a maximum power dissipation of 190 W, effective heatsinking and thermal coupling to a chassis or dedicated sink are necessary to maintain junction temperatures within safe limits.