Vishay IRF740A N-Channel Power MOSFET, 10 A, 400 V Enhancement, 3-Pin TO-220AB IRF740APBF

RS-stocknr.:: 178-0831
Fabrikantnummer:: IRF740APBF
Fabrikant:: Vishay

Vishay IRF740A N-Channel Power MOSFET, 10 A, 400 V Enhancement, 3-Pin TO-220AB IRF740APBF

Bulkkorting beschikbaar

Bekijk bulkkorting

Subtotaal (1 tube van 50 eenheden)*

€ 79,20

(excl. BTW)

€ 95,85

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 90,00

Op voorraad

900 stuk(s) klaar voor verzending vanaf een andere locatie

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk	Per tube*
50 - 50	€ 1,584	€ 79,20
100 - 200	€ 1,362	€ 68,10
250 +	€ 1,267	€ 63,35

*prijsindicatie

RS-stocknr.:: 178-0831
Fabrikantnummer:: IRF740APBF
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Channel Type	N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	10A
	Maximum Drain Source Voltage Vds	400V
	Series	IRF740A
	Package Type	TO-220AB
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	550mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	-30V, +30V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	36nC
	Forward Voltage Vf	2V
	Maximum Power Dissipation Pd	125W
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Length	10.41mm
	Height	9.01mm
	Width	4.7mm
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Channel Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 10A
	Maximum Drain Source Voltage Vds 400V
	Series IRF740A
	Package Type TO-220AB
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 550mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs -30V, +30V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 36nC
	Forward Voltage Vf 2V
	Maximum Power Dissipation Pd 125W
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Length 10.41mm
	Height 9.01mm
	Width 4.7mm
	Automotive Standard No

Vishay IRF740A Series Power MOSFET, 400V Maximum Drain Source Voltage, 10A Maximum Continuous Drain Current - IRF740APBF

This power MOSFET is a high-voltage N-channel transistor engineered for switching roles in power electronics. It operates across a broad temperature range and is supplied in a through-hole TO-220AB package suitable for heat-sinking and straightforward mounting. The device is RoHS-compliant and designed for enhancement-mode switching in circuits requiring significant voltage handling.

Features and Benefits:

• 400V drain-source rating enabling high-voltage switching capability
• 10A continuous drain current for steady power delivery
• 125W maximum dissipation supports higher-load operation
• 550 mΩ RDS(on) allowing predictable conduction losses
• 36 nC typical gate charge for manageable gate driving
• 30V maximum gate-source voltage protects against overdrive

Applications

• Suitable for offline power supplies and converters
• Ideal for motor-drive switching stages
• Used with inverter circuits requiring high voltage
• Can be used for industrial switching regulators
• Appropriate for through-hole prototyping and repair work

What are the thermal limits for reliable operation?

The device is rated to function between -55 °C and 150 °C, permitting use in demanding thermal environments when coupled with adequate cooling.

How does the package aid thermal management?

The TO-220AB through-hole format allows attachment to a heatsink and offers a low thermal‑resistance path for dissipating up to 125W under specified conditions.

What gate drive considerations apply for fast switching?

With a typical gate charge of 36 nC, driver selection should match the desired switching speed and account for switching losses and available drive current.

How should the forward voltage be treated in design calculations?

A forward voltage of 2V should be included when estimating conduction losses and voltage drops in circuits that rely on body‑diode behaviour or synchronous switching.