Vishay IRL Type N-Channel MOSFET, 17 A, 200 V Enhancement, 3-Pin TO-263 IRL640SPBF
- RS-stocknr.:
- 178-0857
- Fabrikantnummer:
- IRL640SPBF
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 tube van 50 eenheden)*
€ 90,00
(excl. BTW)
€ 109,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tijdelijk niet op voorraad
- Verzending 1.000 stuk(s) vanaf 26 november 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 50 - 50 | € 1,80 | € 90,00 |
| 100 - 200 | € 1,753 | € 87,65 |
| 250 + | € 1,71 | € 85,50 |
*prijsindicatie
- RS-stocknr.:
- 178-0857
- Fabrikantnummer:
- IRL640SPBF
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 17A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | IRL | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 180mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 66nC | |
| Forward Voltage Vf | 2V | |
| Maximum Gate Source Voltage Vgs | 10V | |
| Maximum Power Dissipation Pd | 3.1W | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.83mm | |
| Width | 9.65mm | |
| Standards/Approvals | No | |
| Length | 10.67mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 17A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series IRL | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 180mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 66nC | ||
Forward Voltage Vf 2V | ||
Maximum Gate Source Voltage Vgs 10V | ||
Maximum Power Dissipation Pd 3.1W | ||
Maximum Operating Temperature 150°C | ||
Height 4.83mm | ||
Width 9.65mm | ||
Standards/Approvals No | ||
Length 10.67mm | ||
Automotive Standard No | ||
N-Channel MOSFET, 200V to 250V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Gerelateerde Links
- Vishay IRL Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-263 IRL640SPBF
- Vishay IRL Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-220 IRL630PBF
- onsemi IRL Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-220 IRL640A
- ROHM Type N-Channel MOSFET 1200 V Enhancement, 7-Pin TO-263
- ROHM Type N-Channel MOSFET 1200 V Enhancement, 7-Pin TO-263 SCT3160KW7HRTL
- Texas Instruments Type N-Channel MOSFET 100 V Enhancement TO-263
- STMicroelectronics MDmesh Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-263
- STMicroelectronics MDmesh Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263