Vishay Siliconix Dual TrenchFET 2 Type N, Type P-Channel MOSFET, 30 A, 40 V Enhancement, 8-Pin SO-8 SQJ504EP-T1_GE3

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Verpakkingsopties
RS-stocknr.:
178-3893
Fabrikantnummer:
SQJ504EP-T1_GE3
Fabrikant:
Vishay Siliconix
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Merk

Vishay Siliconix

Channel Type

Type N, Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

30A

Maximum Drain Source Voltage Vds

40V

Package Type

SO-8

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

30mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

12.1nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

34W

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Transistor Configuration

Dual

Height

1.07mm

Width

5 mm

Standards/Approvals

No

Length

5.99mm

Number of Elements per Chip

2

Automotive Standard

AEC-Q101

Vrijgesteld

Land van herkomst:
CN

Vishay MOSFET


The Vishay surface mount dual channel (both N and P-channels) MOSFET is a new age product with a drain-source voltage of 40V. It has drain-source resistance of 17mohm at a gate-source voltage of 10V. It has a maximum power dissipation of 34W and a continuous drain current of 30A. The MOSFET has been optimized, for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality. It is applicable in the automotive industry.

Features and Benefits


• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 175°C

• TrenchFET power MOSFET

Certifications


• AEC-Q101

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• Rg tested

• UIS tested

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