Vishay Siliconix SQJ872EP Type N-Channel MOSFET, 24.5 A, 150 V Enhancement, 8-Pin SO-8L SQJ872EP-T1_GE3

RS-stocknr.:: 178-3903
Fabrikantnummer:: SQJ872EP-T1_GE3
Fabrikant:: Vishay Siliconix

Vishay Siliconix SQJ872EP Type N-Channel MOSFET, 24.5 A, 150 V Enhancement, 8-Pin SO-8L SQJ872EP-T1_GE3

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€ 11,52

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€ 13,94

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Aantal stuks	Per stuk	Per verpakking*
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100 - 490	€ 0,978	€ 9,78
500 - 990	€ 0,864	€ 8,64
1000 +	€ 0,749	€ 7,49

*prijsindicatie

RS-stocknr.:: 178-3903
Fabrikantnummer:: SQJ872EP-T1_GE3
Fabrikant:: Vishay Siliconix

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay Siliconix
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	24.5A
	Maximum Drain Source Voltage Vds	150V
	Series	SQJ872EP
	Package Type	SO-8L
	Mount Type	PCB
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.0395Ω
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20V
	Typical Gate Charge Qg @ Vgs	14nC
	Forward Voltage Vf	1.2V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	55W
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Width	5mm
	Height	1.07mm
	Length	5.99mm
	Automotive Standard	AEC-Q101

	Alles selecteren
	Merk Vishay Siliconix
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 24.5A
	Maximum Drain Source Voltage Vds 150V
	Series SQJ872EP
	Package Type SO-8L
	Mount Type PCB
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.0395Ω
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20V
	Typical Gate Charge Qg @ Vgs 14nC
	Forward Voltage Vf 1.2V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 55W
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Width 5mm
	Height 1.07mm
	Length 5.99mm
	Automotive Standard AEC-Q101

Datasheet

Vrijgesteld

Land van herkomst:: CN

Vishay SQJ872EP Series MOSFET, 150V Drain Source Voltage, 24.5A Continuous Drain Current - SQJ872EP-T1_GE3

This MOSFET is a power switching device designed for high-voltage, high-current applications in demanding environments. It functions as an N‑channel enhancement transistor for switching and power conversion roles. The device is suitable for PCB mounting in a small-outline package and is manufactured to meet industry environmental standards.

Features and Benefits:

• Low on-resistance 0.0395Ω delivering reduced conduction losses
• High voltage capability 150V enabling robust switching headroom
• Continuous current rating 24.5A supporting substantial load currents
• Gate charge 14nC enabling efficient switching control
• Power dissipation 55W allowing sustained thermal load handling
• Wide gate tolerance ±20V making gate drive design flexible

Applications

• Suitable for automotive power stages requiring AEC‑Q101 compliance
• Ideal for industrial motor drive switch arrays
• Used with DC-DC converters in high-voltage systems
• Can be used for synchronous rectification in power supplies
• Useful in inverter and UPS front-end switching stages

What temperature range can it tolerate in harsh installations?

It operates across an extended span from -55°C up to 175°C, supporting extreme industrial and automotive thermal conditions.

What package and mounting approach does it use for board assembly?

The device is supplied in an SO‑8L package designed for PCB mounting to simplify integration into compact assemblies.

How does its forward voltage impact system design?

The forward conduction drop is 1.2V under specified conditions, which should be included in power-loss calculations and thermal‑management assessments.

Is the device suitable for regulated manufacturing and environmental requirements?

It meets RoHS directives, indicating restriction of specified hazardous substances in the component materials.