onsemi NVMFS6H801N Type N-Channel MOSFET, 157 A, 80 V Enhancement, 5-Pin DFN NVMFS6H801NT1G
- RS-stocknr.:
- 178-4450
- Fabrikantnummer:
- NVMFS6H801NT1G
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 10 eenheden)*
€ 20,76
(excl. BTW)
€ 25,12
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- 480 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 90 | € 2,076 | € 20,76 |
| 100 - 240 | € 1,789 | € 17,89 |
| 250 + | € 1,552 | € 15,52 |
*prijsindicatie
- RS-stocknr.:
- 178-4450
- Fabrikantnummer:
- NVMFS6H801NT1G
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 157A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | NVMFS6H801N | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 2.8mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 64nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 166W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 6.1 mm | |
| Length | 5.1mm | |
| Height | 1.05mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 157A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series NVMFS6H801N | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 2.8mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 64nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 166W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 6.1 mm | ||
Length 5.1mm | ||
Height 1.05mm | ||
Automotive Standard AEC-Q101 | ||
- Land van herkomst:
- MY
Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection.Suitable for automotive applications.
Features
Small Footprint (5x6 mm)
Low RDS(on)
Low QG and Capacitance
NVMFS6H801NWF - Wettable Flank Option
PPAP capable
Benefits
Compact Design
Minimize Conduction Losses
Minimize Driver Losses
Enhanced Optical Inspection
Applications
Switching power supplies
Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)
48V systems
End Products
Motor Control
DC/DC converter
Load Switch
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