Vishay Type P-Channel MOSFET, 13.2 A, 100 V, 8-Pin PowerPAK 1212-8 SI7113DN-T1-GE3
- RS-stocknr.:
- 180-7305
- Fabrikantnummer:
- SI7113DN-T1-GE3
- Fabrikant:
- Vishay
Niet beschikbaar
RS heeft dit product niet meer op voorraad.
- RS-stocknr.:
- 180-7305
- Fabrikantnummer:
- SI7113DN-T1-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current (Id) | 13.2 A | |
| Maximum Drain Source Voltage (Vds) | 100 V | |
| Pin Count | 8 | |
| Package Type | PowerPAK 1212-8 | |
| Automotive Standard | No | |
| Forward Voltage (Vf) | 1.2 V | |
| Height | 1.12 mm | |
| Length | 3.61 mm | |
| Maximum Drain Source Resistance (Rds) | 0.145 Ω | |
| Maximum Gate Source Voltage (Vgs) | 20 V | |
| Maximum Operating Temperature | 150 °C | |
| Maximum Power Dissipation (Pd) | 52 W | |
| Minimum Operating Temperature | 50 °C | |
| Mount Type | Surface | |
| Standards/Approvals | JEDEC JS709A, RoHS | |
| Typical Gate Charge (Qg) @ Vgs | 16.5 nC | |
| Width | 3.61 mm | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current (Id) 13.2 A | ||
Maximum Drain Source Voltage (Vds) 100 V | ||
Pin Count 8 | ||
Package Type PowerPAK 1212-8 | ||
Automotive Standard No | ||
Forward Voltage (Vf) 1.2 V | ||
Height 1.12 mm | ||
Length 3.61 mm | ||
Maximum Drain Source Resistance (Rds) 0.145 Ω | ||
Maximum Gate Source Voltage (Vgs) 20 V | ||
Maximum Operating Temperature 150 °C | ||
Maximum Power Dissipation (Pd) 52 W | ||
Minimum Operating Temperature 50 °C | ||
Mount Type Surface | ||
Standards/Approvals JEDEC JS709A, RoHS | ||
Typical Gate Charge (Qg) @ Vgs 16.5 nC | ||
Width 3.61 mm | ||
- Land van herkomst:
- CN
Vishay MOSFET
The Vishay surface mount P-channel PowerPAK-1212-8 MOSFET is a new age product with a drain-source voltage of 100V and a maximum gate-source voltage of 20V. It has a drain-source resistance of 134mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 52W and continuous drain current of 13.2A. This product has been optimized for lower switching and conduction losses. It has applications in the Active clamp in intermediate DC/DC power supplies. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Halogen and Lead (Pb) free
• Low thermal resistance powerpak package with small size and low 1.07mm profile
• Maximum and minimum driving voltage is 4.5V and 10V
• Maximum dissipation power is 52W
• Operating temperature ranges between -50°C and 150°C
• TrenchFET power MOSFET
Certifications
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• Rg tested
• UIS tested
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