DiodesZetex DMP Type P-Channel MOSFET, 21 A, 30 V Enhancement, 8-Pin PowerDI5060
- RS-stocknr.:
- 182-6918
- Fabrikantnummer:
- DMP34M4SPS-13
- Fabrikant:
- DiodesZetex
Subtotaal (1 rol van 2500 eenheden)*
€ 1.115,00
(excl. BTW)
€ 1.350,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 05 augustus 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 2500 + | € 0,446 | € 1.115,00 |
*prijsindicatie
- RS-stocknr.:
- 182-6918
- Fabrikantnummer:
- DMP34M4SPS-13
- Fabrikant:
- DiodesZetex
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | DiodesZetex | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 21A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PowerDI5060 | |
| Series | DMP | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 6mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Power Dissipation Pd | 3W | |
| Forward Voltage Vf | -1.2V | |
| Typical Gate Charge Qg @ Vgs | 127nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1.05mm | |
| Length | 6mm | |
| Width | 5.1 mm | |
| Automotive Standard | AEC-Q101, AEC-Q200, AEC-Q100 | |
| Alles selecteren | ||
|---|---|---|
Merk DiodesZetex | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 21A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PowerDI5060 | ||
Series DMP | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 6mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Power Dissipation Pd 3W | ||
Forward Voltage Vf -1.2V | ||
Typical Gate Charge Qg @ Vgs 127nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1.05mm | ||
Length 6mm | ||
Width 5.1 mm | ||
Automotive Standard AEC-Q101, AEC-Q200, AEC-Q100 | ||
- Land van herkomst:
- CN
This new generation MOSFET is designed to minimize RDS(ON) and yet maintain superior switching performance. This device is ideal for use in notebook battery power management and load switch.
100% Unclamped Inductive Switch (UIS) Test in Production
Thermally Efficient Package – Cooler Running Applications
High Conversion Efficiency
Low RDS(ON) – Minimizes On State Losses
<1.1mm Package Profile – Ideal for Thin Applications
Lead-free finish
Halogen and Antimony Free. Green Device
Application
Switch
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