DiodesZetex DMTH6016LK3 Type N-Channel MOSFET, 46.9 A, 60 V Enhancement, 4-Pin TO-252 DMTH6016LK3-13
- RS-stocknr.:
- 182-7269
- Fabrikantnummer:
- DMTH6016LK3-13
- Fabrikant:
- DiodesZetex
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 25 eenheden)*
€ 9,775
(excl. BTW)
€ 11,825
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 4.250 stuk(s) vanaf 29 december 2025
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 25 - 225 | € 0,391 | € 9,78 |
| 250 - 475 | € 0,32 | € 8,00 |
| 500 - 975 | € 0,294 | € 7,35 |
| 1000 - 1475 | € 0,251 | € 6,28 |
| 1500 + | € 0,235 | € 5,88 |
*prijsindicatie
- RS-stocknr.:
- 182-7269
- Fabrikantnummer:
- DMTH6016LK3-13
- Fabrikant:
- DiodesZetex
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 46.9A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-252 | |
| Series | DMTH6016LK3 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 24mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 17nC | |
| Maximum Power Dissipation Pd | 60W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 6.2 mm | |
| Length | 6.7mm | |
| Height | 2.26mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 46.9A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-252 | ||
Series DMTH6016LK3 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 24mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 17nC | ||
Maximum Power Dissipation Pd 60W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 6.2 mm | ||
Length 6.7mm | ||
Height 2.26mm | ||
Automotive Standard AEC-Q101 | ||
- Land van herkomst:
- CN
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Rated to +175°C – Ideal for High Ambient Temperature
Environments
Low RDS(ON) – Ensures On State Losses Are Minimized
Excellent Qgd x RDS(ON) Product (FOM)
Lead-free finish
Halogen and Antimony Free. Green Device.
Power Management Functions
DC-DC Converters
Backlighting
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