DiodesZetex DMP Type P-Channel MOSFET, 0.25 A, 450 V Enhancement, 4-Pin SOT-223 DMP45H150DHE-13
- RS-stocknr.:
- 182-7409
- Fabrikantnummer:
- DMP45H150DHE-13
- Fabrikant:
- DiodesZetex
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 50 eenheden)*
€ 30,70
(excl. BTW)
€ 37,15
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- Plus verzending 1.500 stuk(s) vanaf 01 juni 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 50 - 200 | € 0,614 | € 30,70 |
| 250 - 450 | € 0,538 | € 26,90 |
| 500 - 950 | € 0,43 | € 21,50 |
| 1000 - 1950 | € 0,358 | € 17,90 |
| 2000 + | € 0,331 | € 16,55 |
*prijsindicatie
- RS-stocknr.:
- 182-7409
- Fabrikantnummer:
- DMP45H150DHE-13
- Fabrikant:
- DiodesZetex
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 0.25A | |
| Maximum Drain Source Voltage Vds | 450V | |
| Package Type | SOT-223 | |
| Series | DMP | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 150mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 1.8nC | |
| Maximum Power Dissipation Pd | 59.4W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 6.55mm | |
| Height | 1.65mm | |
| Automotive Standard | AEC-Q101, AEC-Q100, AEC-Q200 | |
| Alles selecteren | ||
|---|---|---|
Merk DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 0.25A | ||
Maximum Drain Source Voltage Vds 450V | ||
Package Type SOT-223 | ||
Series DMP | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 150mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 1.8nC | ||
Maximum Power Dissipation Pd 59.4W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 6.55mm | ||
Height 1.65mm | ||
Automotive Standard AEC-Q101, AEC-Q100, AEC-Q200 | ||
- Land van herkomst:
- CN
This 450V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a variety of Telecom and general high voltage switching circuits.
Low Gate Drive
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free
Halogen and Antimony Free. “Green” Device
Applications
Load Switching
Uninterrupted Power Supply
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