ROHM RS1E130GN N-Channel MOSFET, 35 A, 30 V, 8-Pin HSOP8 RS1E130GNTB

Niet beschikbaar
RS heeft dit product niet meer op voorraad.
RS-stocknr.:
183-5132
Fabrikantnummer:
RS1E130GNTB
Fabrikant:
ROHM
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren

Merk

ROHM

Channel Type

N

Maximum Continuous Drain Current

35 A

Maximum Drain Source Voltage

30 V

Package Type

HSOP8

Series

RS1E130GN

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

17.7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

22 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

5mm

Number of Elements per Chip

1

Length

5.8mm

Typical Gate Charge @ Vgs

7.9 nC @ 10 V

Maximum Operating Temperature

150 °C

Height

1.05mm

Forward Diode Voltage

1.2V

Minimum Operating Temperature

-55 °C

Land van herkomst:
TH
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

Low on - resistance
High Power Package (HSOP8)
Pb-free lead plating
Halogen Free

Gerelateerde Links