RS1E130GNTB N-Channel MOSFET, 35 A, 30 V RS1E130GN, 8-Pin HSOP ROHM

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€ 56,30

(excl. BTW)

€ 68,10

(incl. BTW)

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Verpakkingsopties
RS-stocknr.:
183-5451P
Fabrikantnummer:
RS1E130GNTB
Fabrikant:
ROHM
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Merk

ROHM

Channel Type

N

Maximum Continuous Drain Current

35 A

Maximum Drain Source Voltage

30 V

Package Type

HSOP8

Series

RS1E130GN

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

17.7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

22 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Typical Gate Charge @ Vgs

7.9 nC @ 10 V

Number of Elements per Chip

1

Length

5.8mm

Maximum Operating Temperature

150 °C

Width

5mm

Forward Diode Voltage

1.2V

Height

1.05mm

Minimum Operating Temperature

-55 °C

Land van herkomst:
TH
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

Low on - resistance
High Power Package (HSOP8)
Pb-free lead plating
Halogen Free

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