onsemi Dual 2 Type N-Channel Small Signal, 540 mA, 20 V Enhancement, 6-Pin SOT-563
- RS-stocknr.:
- 184-1071
- Fabrikantnummer:
- NTZD3154NT1G
- Fabrikant:
- onsemi
Subtotaal (1 rol van 4000 eenheden)*
€ 248,00
(excl. BTW)
€ 300,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- 4.000 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 4000 + | € 0,062 | € 248,00 |
*prijsindicatie
- RS-stocknr.:
- 184-1071
- Fabrikantnummer:
- NTZD3154NT1G
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | Small Signal | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 540mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-563 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 900mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.7V | |
| Maximum Power Dissipation Pd | 250mW | |
| Maximum Gate Source Voltage Vgs | 7 V | |
| Typical Gate Charge Qg @ Vgs | 1.5nC | |
| Minimum Operating Temperature | 150°C | |
| Maximum Operating Temperature | -55°C | |
| Transistor Configuration | Dual | |
| Height | 0.6mm | |
| Length | 1.7mm | |
| Width | 1.3 mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type Small Signal | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 540mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-563 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 900mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.7V | ||
Maximum Power Dissipation Pd 250mW | ||
Maximum Gate Source Voltage Vgs 7 V | ||
Typical Gate Charge Qg @ Vgs 1.5nC | ||
Minimum Operating Temperature 150°C | ||
Maximum Operating Temperature -55°C | ||
Transistor Configuration Dual | ||
Height 0.6mm | ||
Length 1.7mm | ||
Width 1.3 mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
This is a 20 V N-Channel Power MOSFET.
Low RDS(on) Improving System Efficiency
Low Threshold Voltage
Small Footprint 1.6 x 1.6 mm
ESD Protected Gate
Applications:
Load/Power Switches
Power Supply Converter Circuits
Battery Management
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