onsemi Type N-Channel MOSFET, 477 A, 60 V Enhancement, 8-Pin DFN
- RS-stocknr.:
- 185-8161
- Fabrikantnummer:
- NVMTS0D7N06CLTXG
- Fabrikant:
- onsemi
Tekort aan voorraad
Vanwege een wereldwijd voorraadtekort, weten we niet wanneer dit weer voorradig zal zijn.
- RS-stocknr.:
- 185-8161
- Fabrikantnummer:
- NVMTS0D7N06CLTXG
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 477A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 900μΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 294.6W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 225nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 8.1mm | |
| Width | 8 mm | |
| Height | 1.15mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 477A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 900μΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 294.6W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 225nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 8.1mm | ||
Width 8 mm | ||
Height 1.15mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
Niet conform
- Land van herkomst:
- PH
Automotive Power MOSFET in a 8x8mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. MOSFET and PPAP capable suitable for automotive applications.
Small Footprint (8x8 mm)
Low RDS(on)
Low QG and Capacitance
Wettable Flank Option
PPAP Capable
Compact Design
Minimize Conduction Losses
Minimize Driver Losses
Enhanced Optical Inspection
Applications
Reverser Battery protection
Switching power supplies
Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)
End Products
Motor Control – EPS, Wipers, Fans, Seats, etc.
Load Switch – ECU, Chassis, Body
Gerelateerde Links
- onsemi Type N-Channel MOSFET 60 V Enhancement, 8-Pin DFN NVMTS0D7N06CLTXG
- onsemi Type N-Channel MOSFET 60 V Enhancement, 5-Pin DFN NVMFS5C670NLT1G
- onsemi NVMFS5C604NL Type N-Channel MOSFET 60 V Enhancement, 4-Pin DFN
- onsemi NTMFS5C673NL Type N-Channel MOSFET 60 V Enhancement, 5-Pin DFN
- onsemi NTMFS Type N-Channel MOSFET 60 V Enhancement, 5-Pin DFN
- onsemi NTMFS Type N-Channel MOSFET 60 V Enhancement, 5-Pin DFN
- onsemi NVMFS5C638NL Type N-Channel MOSFET 60 V Enhancement, 5-Pin DFN
- onsemi NVMFS5C670NL Type N-Channel MOSFET 60 V Enhancement, 5-Pin DFN
