onsemi NVMJS1D3N04C N-Channel MOSFET, 235 A, 40 V Enhancement, 8-Pin LFPAK NVMJS1D3N04CTWG
- RS-stocknr.:
- 185-9186
- Fabrikantnummer:
- NVMJS1D3N04CTWG
- Fabrikant:
- onsemi
Ontvang bulkkorting
Voeg 40 meer toe om 13% te besparen
Bekijk bulkkortingSubtotaal (1 verpakking van 4 eenheden)*
€ 11,42
(excl. BTW)
€ 13,82
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Laatste voorraad RS
- Laatste 1.740 stuk(s), klaar voor verzending vanaf een andere locatie
Aantal stuks | Per stuk | Per verpakking* | Bespaar |
|---|---|---|---|
| 4 - 36 | € 2,855 | € 11,42 | - |
| 40 - 396 | € 2,463 | € 9,85 | 13% |
| 400 - 1996 | € 2,135 | € 8,54 | 25% |
| 2000 + | € 1,878 | € 7,51 | 34% |
*prijsindicatie
- RS-stocknr.:
- 185-9186
- Fabrikantnummer:
- NVMJS1D3N04CTWG
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 235A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | LFPAK | |
| Series | NVMJS1D3N04C | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.3mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 65nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 128W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 4.9mm | |
| Height | 1.2mm | |
| Length | 5mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 235A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type LFPAK | ||
Series NVMJS1D3N04C | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.3mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 65nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 128W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 4.9mm | ||
Height 1.2mm | ||
Length 5mm | ||
Automotive Standard AEC-Q101 | ||
Niet conform
- Land van herkomst:
- PH
Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability.
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
LFPAK8 Package, Industry Standard
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free
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