Fabrikantnummer

onsemi NVMYS1D3N04C Type N-Channel MOSFET, 252 A, 40 V Enhancement, 4-Pin LFPAK NVMYS1D3N04CTWG

RS-stocknr.:: 185-9246
Fabrikantnummer:: NVMYS1D3N04CTWG
Fabrikant:: onsemi

onsemi NVMYS1D3N04C Type N-Channel MOSFET, 252 A, 40 V Enhancement, 4-Pin LFPAK NVMYS1D3N04CTWG

Subtotaal (1 verpakking van 4 eenheden)*

€ 7,14

(excl. BTW)

€ 8,64

(incl. BTW)

Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw

Aantal stuks	Per stuk	Per verpakking*
4 +	€ 1,785	€ 7,14

*prijsindicatie

RS-stocknr.:: 185-9246
Fabrikantnummer:: NVMYS1D3N04CTWG
Fabrikant:: onsemi

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	onsemi
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	252A
	Maximum Drain Source Voltage Vds	40V
	Series	NVMYS1D3N04C
	Package Type	LFPAK
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	1.15mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	75nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	134W
	Maximum Operating Temperature	175°C
	Length	5mm
	Height	1.2mm
	Width	4.25 mm
	Standards/Approvals	No
	Automotive Standard	AEC-Q101

	Alles selecteren
	Merk onsemi
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 252A
	Maximum Drain Source Voltage Vds 40V
	Series NVMYS1D3N04C
	Package Type LFPAK
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 1.15mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 75nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 134W
	Maximum Operating Temperature 175°C
	Length 5mm
	Height 1.2mm
	Width 4.25 mm
	Standards/Approvals No
	Automotive Standard AEC-Q101

Datasheet NVMYS1D3N04CTWG

Niet conform

Land van herkomst:: PH

Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability.

Small Footprint (5x6 mm) for Compact Design

Low RDS(on) to Minimize Conduction Losses

Low QG and Capacitance to Minimize Driver Losses

LFPAK4 Package, Industry Standard

PPAP Capable

These Devices are Pb−Free

onsemi NVMYS1D3N04C Type N-Channel MOSFET, 252 A, 40 V Enhancement, 4-Pin LFPAK NVMYS1D3N04CTWG

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