onsemi Type N-Channel MOSFET, 30 A, 650 V Enhancement, 3-Pin TO-247
- RS-stocknr.:
- 186-1285
- Fabrikantnummer:
- NVHL110N65S3F
- Fabrikant:
- onsemi
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- RS-stocknr.:
- 186-1285
- Fabrikantnummer:
- NVHL110N65S3F
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 110mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 240W | |
| Typical Gate Charge Qg @ Vgs | 58nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 20.82mm | |
| Standards/Approvals | No | |
| Length | 15.87mm | |
| Width | 4.82 mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 110mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 240W | ||
Typical Gate Charge Qg @ Vgs 58nC | ||
Maximum Operating Temperature 150°C | ||
Height 20.82mm | ||
Standards/Approvals No | ||
Length 15.87mm | ||
Width 4.82 mm | ||
Automotive Standard AEC-Q101 | ||
Niet conform
SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability.
700 V @ TJ = 150°C
Ultra Low Gate Charge (Typ. Qg = 58 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 553 pF)
PPAP Capable
Typ. RDS(on) = 93 mΩ
Higher system reliability at low temperature operation
Lower switching loss
PPAP Capable
Applications
HV DC/DC converter
End Products
On Board Charger
DC/DC Converter
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