onsemi NTHL095N N-Channel MOSFET, 30 A, 650 V Enhancement, 3-Pin TO-247 NTHL095N65S3H
- RS-stocknr.:
- 221-6716
- Fabrikantnummer:
- NTHL095N65S3H
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 2 eenheden)*
€ 18,17
(excl. BTW)
€ 21,986
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tekort aan aanbod
- 310 stuk(s) klaar voor verzending vanaf een andere locatie
Onze huidige voorraad is beperkt en onze leveranciers verwachten tekorten.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 18 | € 9,085 | € 18,17 |
| 20 - 198 | € 8,41 | € 16,82 |
| 200 + | € 8,215 | € 16,43 |
*prijsindicatie
- RS-stocknr.:
- 221-6716
- Fabrikantnummer:
- NTHL095N65S3H
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | NTHL095N | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 95mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 208W | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 58nC | |
| Maximum Operating Temperature | 175°C | |
| Width | 4.8mm | |
| Standards/Approvals | No | |
| Height | 41.34mm | |
| Length | 15.87mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series NTHL095N | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 95mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 208W | ||
Maximum Gate Source Voltage Vgs 30V | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 58nC | ||
Maximum Operating Temperature 175°C | ||
Width 4.8mm | ||
Standards/Approvals No | ||
Height 41.34mm | ||
Length 15.87mm | ||
Automotive Standard No | ||
The ON Semiconductor SUPERFET III MOSFET has high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate.
Ultra low gate charge
low effective output capacitance 522 pF
100% avalanche tested
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