STMicroelectronics N-Channel MOSFET, 7.5 A, 60 V Enhancement, 8-Pin SO-8 STS7NF60L
- RS-stocknr.:
- 188-8543
- Fabrikantnummer:
- STS7NF60L
- Fabrikant:
- STMicroelectronics
Ontvang bulkkorting
Voeg 100 meer toe om € 52,30 te besparen
Bekijk bulkkortingSubtotaal (1 verpakking van 10 eenheden)*
€ 16,56
(excl. BTW)
€ 20,04
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- Plus verzending 7.260 stuk(s) vanaf 09 november 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* | Bespaar |
|---|---|---|---|
| 10 - 90 | € 1,656 | € 16,56 | - |
| 100 - 490 | € 1,133 | € 11,33 | € 52,30 |
| 500 - 2490 | € 0,914 | € 9,14 | € 371,00 |
| 2500 + | € 0,854 | € 8,54 | € 2.005,00 |
*prijsindicatie
- RS-stocknr.:
- 188-8543
- Fabrikantnummer:
- STS7NF60L
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 7.5A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 21mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 25nC | |
| Maximum Power Dissipation Pd | 2.5W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 16V | |
| Maximum Operating Temperature | 150°C | |
| Width | 4mm | |
| Height | 1.65mm | |
| Standards/Approvals | No | |
| Length | 5mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 7.5A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 21mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 25nC | ||
Maximum Power Dissipation Pd 2.5W | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 16V | ||
Maximum Operating Temperature 150°C | ||
Width 4mm | ||
Height 1.65mm | ||
Standards/Approvals No | ||
Length 5mm | ||
Automotive Standard No | ||
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
TYPICAL RDS(on) = 0.017 Ω
LOW THRESHOLD DRIVE
STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY
APPLICATIONS
DC MOTOR DRIVE
DC-DC CONVERTERS
BATTERY MANAGEMENT INOMADIC EQUIPMENT
POWER MANAGEMENT IPORTABLE/DESKTOP Pcs
Gerelateerde Links
- STMicroelectronics N-Channel MOSFET 60 V Enhancement, 8-Pin SO-8
- STMicroelectronics STGAP2 N-Channel MOSFET 1.7 kV Enhancement, 8-Pin SO-8 STGAP2SICSNC
- STMicroelectronics SuperMESH Dual N-Channel MOSFET 450 V Enhancement, 8-Pin SO-8 STS1DNC45
- STMicroelectronics STS N-Channel Power MOSFET 30 V Enhancement, 8-Pin SO-8 STS10N3LH5
- Infineon HEXFET N-Channel MOSFET 60 V Enhancement, 8-Pin SO-8 IRF7351TRPBF
- DiodesZetex DMN6022 N-Channel MOSFET 60 V Enhancement, 8-Pin SO-8
- Vishay TrenchFET N-Channel MOSFET 60 V Enhancement, 8-Pin SO-8 SiR188DP-T1-RE3
- Infineon Dual N Channel Mosfet HEXFET 2 N-Channel MOSFET 55 V Enhancement, 8-Pin SO-8 IRF7341GTRPBF