Infineon HEXFET N-Channel MOSFET, 8 A, 60 V Enhancement, 8-Pin SO-8 IRF7351TRPBF

RS-stocknr.:: 273-2805
Fabrikantnummer:: IRF7351TRPBF
Fabrikant:: Infineon

Infineon HEXFET N-Channel MOSFET, 8 A, 60 V Enhancement, 8-Pin SO-8 IRF7351TRPBF

Subtotaal (1 rol van 4000 eenheden)*

€ 2.228,00

(excl. BTW)

€ 2.696,00

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 90,00

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Verzending vanaf 01 november 2027

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Aantal stuks	Per stuk	Per rol*
4000 +	€ 0,557	€ 2.228,00

*prijsindicatie

RS-stocknr.:: 273-2805
Fabrikantnummer:: IRF7351TRPBF
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	8A
	Maximum Drain Source Voltage Vds	60V
	Series	HEXFET
	Package Type	SO-8
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	17.8mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20V
	Typical Gate Charge Qg @ Vgs	36nC
	Maximum Power Dissipation Pd	2W
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS

	Alles selecteren
	Merk Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 8A
	Maximum Drain Source Voltage Vds 60V
	Series HEXFET
	Package Type SO-8
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 17.8mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20V
	Typical Gate Charge Qg @ Vgs 36nC
	Maximum Power Dissipation Pd 2W
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS

Datasheet - IRF7351TRPBF

Land van herkomst:: PH

Infineon HEXFET Series MOSFET, 60V Maximum Drain-Source Voltage, 8A Maximum Continuous Drain Current - IRF7351TRPBF

This MOSFET is an N-channel enhancement device designed for surface-mounted power switching and control in Compact assemblies. It operates across an extended temperature range suitable for harsh environments and is supplied in an SO-8 package for automated assembly processes.

Features and Benefits:

• 17.8mΩ Rds(on) reduces conduction losses for high-current switching
• 60V Vds permits operation in moderate-voltage power stages
• 8A Id supports substantial continuous current delivery
• 36nC Qg improves switching control for drive-circuit design
• 2W Pd limits thermal stress in constrained PCB layouts

Applications

• Suitable for high-current SMD power stages
• Ideal for automotive electronics operating extremes
• Used with Compact motor-driver modules
• Can be used for DC-DC converter output stages
• Suitable for surface-mounted load-switch implementations

What gate voltage limitations should be observed?

The gate must not exceed 20V relative to source to prevent damage.

How does thermal range affect deployment choices?

The device functions from -55°C to 150°C allowing use in extended-temperature environments.

What mounting method is required for this component?

It is intended for surface mounting in an SO-8 footprint for automated soldering.

What channel conduction mode is implemented?

The transistor operates in enhancement mode with N-type channel conduction.