STMicroelectronics N-Channel MOSFET, 10 A, 650 V Enhancement, 3-Pin TO-252
- RS-stocknr.:
- 188-8550P
- Fabrikantnummer:
- STD11N60DM2
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal 50 eenheden (geleverd op een doorlopende strip)*
€ 58,30
(excl. BTW)
€ 70,55
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- Plus verzending 2.105 stuk(s) vanaf 21 september 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk |
|---|---|
| 50 - 245 | € 1,166 |
| 250 - 495 | € 1,04 |
| 500 + | € 0,894 |
*prijsindicatie
- RS-stocknr.:
- 188-8550P
- Fabrikantnummer:
- STD11N60DM2
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 10A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 420mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.6V | |
| Typical Gate Charge Qg @ Vgs | 16.5nC | |
| Maximum Gate Source Voltage Vgs | 25V | |
| Maximum Power Dissipation Pd | 110W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.6mm | |
| Height | 2.17mm | |
| Width | 6.2mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 10A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 420mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.6V | ||
Typical Gate Charge Qg @ Vgs 16.5nC | ||
Maximum Gate Source Voltage Vgs 25V | ||
Maximum Power Dissipation Pd 110W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 6.6mm | ||
Height 2.17mm | ||
Width 6.2mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
Fast-recovery body diode
Extremely low gate charge and input capacitance
Low on-resistance
Extremely high dv/dt ruggedness
Zener-protected
Applications
Switching applications