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Alles selecteren	Attribuut	Waarde
	Merk	onsemi
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	164A
	Maximum Drain Source Voltage Vds	60V
	Series	NVMJS2D5N06CL
	Package Type	LFPAK
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	3.3mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	113W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	52nC
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	175°C
	Height	1.15mm
	Length	5mm
	Width	4.9 mm
	Standards/Approvals	No
	Automotive Standard	AEC-Q101

	Alles selecteren
	Merk onsemi
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 164A
	Maximum Drain Source Voltage Vds 60V
	Series NVMJS2D5N06CL
	Package Type LFPAK
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 3.3mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 113W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 52nC
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 175°C
	Height 1.15mm
	Length 5mm
	Width 4.9 mm
	Standards/Approvals No
	Automotive Standard AEC-Q101

Datasheet NVMJS2D5N06CLTWG

Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability.

Small Footprint (5x6 mm) for Compact Design

Low RDS(on) to Minimize Conduction Losses

Low QG and Capacitance to Minimize Driver Losses

LFPAK8 Package, Industry Standard

PPAP Capable

These Devices are Pb−Free

onsemi NVMJS2D5N06CL Type N-Channel MOSFET, 164 A, 60 V Enhancement, 8-Pin LFPAK

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