onsemi Dual 2 Type N-Channel Power MOSFET, 25 A, 80 V Enhancement, 8-Pin DFN NVMFD6H852NLWFT1G
- RS-stocknr.:
- 195-2556
- Fabrikantnummer:
- NVMFD6H852NLWFT1G
- Fabrikant:
- onsemi
Subtotaal (1 verpakking van 30 eenheden)*
€ 23,43
(excl. BTW)
€ 28,35
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Laatste voorraad RS
- Laatste 1.500 stuk(s), klaar voor verzending vanaf een andere locatie
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 30 + | € 0,781 | € 23,43 |
*prijsindicatie
- RS-stocknr.:
- 195-2556
- Fabrikantnummer:
- NVMFD6H852NLWFT1G
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 25A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 31.5mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 10nC | |
| Forward Voltage Vf | 0.8V | |
| Minimum Operating Temperature | 175°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 3.2W | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | -55°C | |
| Length | 6.1mm | |
| Width | 5.1 mm | |
| Standards/Approvals | No | |
| Height | 1.05mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 25A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 31.5mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 10nC | ||
Forward Voltage Vf 0.8V | ||
Minimum Operating Temperature 175°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 3.2W | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature -55°C | ||
Length 6.1mm | ||
Width 5.1 mm | ||
Standards/Approvals No | ||
Height 1.05mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
NVMFD6H852NLWF − Wettable Flank Option for Enhanced Optical Inspection
PPAP Capable
These Devices are Pb−Free
Gerelateerde Links
- onsemi Dual N-Channel MOSFET 80 V, 8-Pin DFN NVMFD6H852NLWFT1G
- onsemi Dual N-Channel MOSFET 80 V, 8-Pin DFN NVMFD6H852NLT1G
- onsemi Dual N-Channel MOSFET 80 V, 8-Pin DFN NVMFD6H840NLT1G
- onsemi Dual N-Channel MOSFET 80 V, 8-Pin DFN NVMFD6H840NLWFT1G
- onsemi N-Channel MOSFET 80 V, 5-Pin DFN NTMFS6H801NT1G
- onsemi N-Channel MOSFET 80 V, 5-Pin DFN NVMFS6D1N08HT1G
- onsemi N-Channel MOSFET 80 V, 8-Pin DFN NVMTS1D2N08H
- onsemi N-Channel MOSFET 80 V, 5-Pin DFN NVMFS6H800NT1G
