onsemi Dual 2 Type N-Channel Power MOSFET, 74 A, 80 V Enhancement, 8-Pin DFN NVMFD6H840NLWFT1G
- RS-stocknr.:
- 195-2671
- Fabrikantnummer:
- NVMFD6H840NLWFT1G
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 15 eenheden)*
€ 25,065
(excl. BTW)
€ 30,33
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- Plus verzending 1.170 stuk(s) vanaf 20 april 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 15 - 135 | € 1,671 | € 25,07 |
| 150 - 360 | € 1,44 | € 21,60 |
| 375 + | € 1,248 | € 18,72 |
*prijsindicatie
- RS-stocknr.:
- 195-2671
- Fabrikantnummer:
- NVMFD6H840NLWFT1G
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 74A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 8.8mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 32nC | |
| Forward Voltage Vf | 0.8V | |
| Maximum Power Dissipation Pd | 3.1W | |
| Minimum Operating Temperature | 175°C | |
| Maximum Operating Temperature | -55°C | |
| Transistor Configuration | Dual | |
| Length | 6.1mm | |
| Standards/Approvals | No | |
| Height | 1.05mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 74A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 8.8mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 32nC | ||
Forward Voltage Vf 0.8V | ||
Maximum Power Dissipation Pd 3.1W | ||
Minimum Operating Temperature 175°C | ||
Maximum Operating Temperature -55°C | ||
Transistor Configuration Dual | ||
Length 6.1mm | ||
Standards/Approvals No | ||
Height 1.05mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
Automotive Power MOSFET in a 3x3mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. MOSFET and PPAP capable suitable for automotive applications.
Small Footprint (5x6 mm)
Compact Design
Low RDS(on)
Minimize Conduction Losses
Low QG and Capacitance
Minimize Driver Losses
NVMFS5C410NLWF − Wettable Flank Option
Enhanced Optical Inspection
PPAP Capable
Application
Reverser Battery protection
Switching power supplies
Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)
Gerelateerde Links
- onsemi Dual 2 Type N-Channel Power MOSFET 80 V Enhancement, 8-Pin DFN
- onsemi Dual 2 Type N-Channel Power MOSFET 80 V Enhancement, 8-Pin DFN NVMFD6H840NLT1G
- onsemi Dual 2 Type N-Channel Power MOSFET 80 V Enhancement, 8-Pin DFN
- onsemi Dual 2 Type N-Channel Power MOSFET 80 V Enhancement, 8-Pin DFN NVMFD6H852NLWFT1G
- onsemi Dual 2 Type N-Channel Power MOSFET 80 V Enhancement, 8-Pin DFN NVMFD6H852NLT1G
- onsemi Dual 2 Type N-Channel Power MOSFET 60 V Enhancement, 8-Pin DFN
- onsemi Dual 2 Type N-Channel Power MOSFET 40 V Enhancement, 8-Pin DFN
- onsemi Dual 2 Type N-Channel Power MOSFET 40 V Enhancement, 8-Pin DFN