onsemi Dual 2 N-Channel Power MOSFET, 74 A, 80 V Enhancement, 8-Pin DFN NVMFD6H840NLWFT1G

Bekijk alle MOSFETs
Bulkkorting beschikbaar
Bekijk bulkkorting

Subtotaal (1 verpakking van 15 eenheden)*

€ 27,54

(excl. BTW)

€ 33,33

(incl. BTW)

Add to Basket
selecteer of typ hoeveelheid
Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw

Aantal stuks
Per stuk
Per verpakking*
15 - 135€ 1,836€ 27,54
150 - 360€ 1,583€ 23,75
375 +€ 1,372€ 20,58

*prijsindicatie

Verpakkingsopties
RS-stocknr.:
195-2671
Fabrikantnummer:
NVMFD6H840NLWFT1G
Fabrikant:
onsemi
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren

Merk

onsemi

Product Type

Power MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

74A

Maximum Drain Source Voltage Vds

80V

Package Type

DFN

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

8.8mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

3.1W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

32nC

Forward Voltage Vf

800mV

Maximum Gate Source Voltage Vgs

20V

Transistor Configuration

Dual

Maximum Operating Temperature

+175°C

Standards/Approvals

No

Width

5.1mm

Height

1.05mm

Length

6.1mm

Number of Elements per Chip

2

Automotive Standard

AEC-Q101

Automotive Power MOSFET in a 3x3mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. MOSFET and PPAP capable suitable for automotive applications.

Small Footprint (5x6 mm)

Compact Design

Low RDS(on)

Minimize Conduction Losses

Low QG and Capacitance

Minimize Driver Losses

NVMFS5C410NLWF − Wettable Flank Option

Enhanced Optical Inspection

PPAP Capable

Application

Reverser Battery protection

Switching power supplies

Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)

Gerelateerde Links