STMicroelectronics Type N-Channel MOSFET, 72 A, 600 V Enhancement, 3-Pin TO-247
- RS-stocknr.:
- 195-2681P
- Fabrikantnummer:
- STWA75N60M6
- Fabrikant:
- STMicroelectronics
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- Verzending vanaf 06 januari 2027
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Aantal stuks | Per stuk |
|---|---|
| 10 - 99 | € 8,26 |
| 100 + | € 8,15 |
*prijsindicatie
- RS-stocknr.:
- 195-2681P
- Fabrikantnummer:
- STWA75N60M6
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 72A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 36mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 106nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 446W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 15.9mm | |
| Height | 21.1mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 72A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 36mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 106nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 446W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 15.9mm | ||
Height 21.1mm | ||
Automotive Standard No | ||
The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency.
Reduced switching losses
Lower RDS(on) per area vs previous generation
Low gate input resistance
Zener-protected