STMicroelectronics SCT Type N-Channel MOSFET, 20 A, 1200 V Depletion, 3-Pin Hip-247 SCTWA20N120
- RS-stocknr.:
- 202-5492
- Fabrikantnummer:
- SCTWA20N120
- Fabrikant:
- STMicroelectronics
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€ 10,20
(excl. BTW)
€ 12,34
(incl. BTW)
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Aantal stuks | Per stuk |
|---|---|
| 1 + | € 10,20 |
*prijsindicatie
- RS-stocknr.:
- 202-5492
- Fabrikantnummer:
- SCTWA20N120
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | Hip-247 | |
| Series | SCT | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.189Ω | |
| Channel Mode | Depletion | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 45nC | |
| Maximum Power Dissipation Pd | 175W | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Forward Voltage Vf | 3.6V | |
| Maximum Operating Temperature | 200°C | |
| Height | 41.37mm | |
| Length | 16.02mm | |
| Standards/Approvals | No | |
| Width | 5.15 mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type Hip-247 | ||
Series SCT | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.189Ω | ||
Channel Mode Depletion | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 45nC | ||
Maximum Power Dissipation Pd 175W | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Forward Voltage Vf 3.6V | ||
Maximum Operating Temperature 200°C | ||
Height 41.37mm | ||
Length 16.02mm | ||
Standards/Approvals No | ||
Width 5.15 mm | ||
Automotive Standard No | ||
The STMicroelectronics silicon carbide power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature.
Very fast and robust intrinsic body diode
Low capacitance
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