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Alles selecteren	Attribuut	Waarde
	Merk	onsemi
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	84A
	Maximum Drain Source Voltage Vds	1200V
	Package Type	TO-247
	Series	NTH
	Mount Type	Through Hole
	Pin Count	4
	Maximum Drain Source Resistance Rds	28mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	3.7V
	Typical Gate Charge Qg @ Vgs	220nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	25 V
	Maximum Power Dissipation Pd	510W
	Maximum Operating Temperature	175°C
	Width	5.2 mm
	Height	15.2mm
	Length	18.62mm
	Standards/Approvals	No
	Automotive Standard	No

	Alles selecteren
	Merk onsemi
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 84A
	Maximum Drain Source Voltage Vds 1200V
	Package Type TO-247
	Series NTH
	Mount Type Through Hole
	Pin Count 4
	Maximum Drain Source Resistance Rds 28mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 3.7V
	Typical Gate Charge Qg @ Vgs 220nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 25 V
	Maximum Power Dissipation Pd 510W
	Maximum Operating Temperature 175°C
	Width 5.2 mm
	Height 15.2mm
	Length 18.62mm
	Standards/Approvals No
	Automotive Standard No

Datasheet - NTH4L020N120SC1

Silicon Carbide (SiC) MOSFET - EliteSiC, 20 mohm, 1200 V, M1, TO-247-4L Silicon Carbide (SiC) MOSFET - EliteSiC, 20 mohm, 1200 V, M1, TO-247-4L

The ON Semiconductor Silicon Carbide Power MOSFET runs with 102 Ampere and 1200 Volts. It can be used in uninterruptible power supply, DC or DC converter, Boost inverter.

20mO drain to source on resistance

Ultra low gate charge

100% avalanche tested

Pb free

RoHS compliant

onsemi NTH Type N-Channel MOSFET, 84 A, 1200 V Enhancement, 4-Pin TO-247

Silicon Carbide (SiC) MOSFET - EliteSiC, 20 mohm, 1200 V, M1, TO-247-4L Silicon Carbide (SiC) MOSFET - EliteSiC, 20 mohm, 1200 V, M1, TO-247-4L

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