STMicroelectronics SCT30N120H N-Channel SiC Power Module, 45 A, 1.2 kV Enhancement, 3-Pin Hip-247 SCT30N120H
- RS-stocknr.:
- 204-3952
- Fabrikantnummer:
- SCT30N120H
- Fabrikant:
- STMicroelectronics
Momenteel niet beschikbaar
We weten niet of dit item nog op voorraad komt, RS is van plan dit binnenkort uit ons assortiment te halen.
- RS-stocknr.:
- 204-3952
- Fabrikantnummer:
- SCT30N120H
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Series | SCT30N120H | |
| Channel Type | N | |
| Product Type | SiC Power Module | |
| Maximum Continuous Drain Current (Id) | 45 A | |
| Maximum Drain Source Voltage (Vds) | 1.2 kV | |
| Channel Mode | Enhancement | |
| Pin Count | 3 | |
| Package Type | Hip-247 | |
| Maximum Drain Source Resistance (Rds) | 0.09 Ω | |
| Mount Type | Through Hole | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Series SCT30N120H | ||
Channel Type N | ||
Product Type SiC Power Module | ||
Maximum Continuous Drain Current (Id) 45 A | ||
Maximum Drain Source Voltage (Vds) 1.2 kV | ||
Channel Mode Enhancement | ||
Pin Count 3 | ||
Package Type Hip-247 | ||
Maximum Drain Source Resistance (Rds) 0.09 Ω | ||
Mount Type Through Hole | ||
- Land van herkomst:
- CN
The STMicroelectronics silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP247 package, allows designers to use an industry standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.
Very tight variation of on-resistance vs. temperature
Very high operating junction temperature capability (TJ = 200°C)
Very fast and robust intrinsic body diode
Low capacitance
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