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Alles selecteren	Attribuut	Waarde
	Merk	onsemi
	Channel Type	N
	Maximum Continuous Drain Current	35 A
	Maximum Drain Source Voltage	150 V
	Package Type	PQFN 5 x 6
	Series	PowerTrench
	Mounting Type	Surface Mount
	Pin Count	8
	Maximum Drain Source Resistance	13.2 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4.5V
	Transistor Material	Si
	Number of Elements per Chip	1

	Alles selecteren
	Merk onsemi
	Channel Type N
	Maximum Continuous Drain Current 35 A
	Maximum Drain Source Voltage 150 V
	Package Type PQFN 5 x 6
	Series PowerTrench
	Mounting Type Surface Mount
	Pin Count 8
	Maximum Drain Source Resistance 13.2 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4.5V
	Transistor Material Si
	Number of Elements per Chip 1

Datasheet - NTMFS011N15MC

The ON Semiconductor Power Trench series 150V N-Channel MV MOSFET is produced using advanced process that incorporates shielded gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.

Max rDS(on) = 11.5mohm at VGS is 10V, ID is 35A
Low Conduction Loss
Max rDS(on) is 13.2mohm at VGS is 8V, ID is 18A
50% lower Qrr than other mosfet suppliers
Lowers switching noise /EMI
MSL1 robust package design
100% UIL tested

onsemi PowerTrench N-Channel MOSFET, 35 A, 150 V, 8-Pin PQFN 5 x 6 NTMFS011N15MC

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