onsemi SUPERFET III Type N-Channel MOSFET & Diode, 24 A, 650 V Enhancement, 3-Pin TO-263

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RS-stocknr.:
205-2469
Fabrikantnummer:
FCB125N65S3
Fabrikant:
onsemi
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Merk

onsemi

Product Type

MOSFET & Diode

Channel Type

Type N

Maximum Continuous Drain Current Id

24A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-263

Series

SUPERFET III

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

125mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

46nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

181W

Maximum Gate Source Voltage Vgs

30 V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

14.6mm

Height

4.6mm

Width

9.6 mm

Automotive Standard

No

The ON Semiconductor SUPERFET III series N-Channel MOSFET is high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate.

Continuous Drain Current rating is 24A

Drain to source on resistance rating is 125mohm

Ultra low gate charge

Low stored energy in output capacitance

100% avalanche tested

Package type is D2-PAK

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