DiodesZetex Dual DMC2710 2 Type P, Type N-Channel MOSFET, 800 mA, 20 V Enhancement, 6-Pin SOT-563
- RS-stocknr.:
- 206-0057
- Fabrikantnummer:
- DMC2710UV-7
- Fabrikant:
- DiodesZetex
Subtotaal (1 verpakking van 50 eenheden)*
€ 10,35
(excl. BTW)
€ 12,50
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 5.200 stuk(s) vanaf 29 december 2025
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 50 + | € 0,207 | € 10,35 |
*prijsindicatie
- RS-stocknr.:
- 206-0057
- Fabrikantnummer:
- DMC2710UV-7
- Fabrikant:
- DiodesZetex
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type P, Type N | |
| Maximum Continuous Drain Current Id | 800mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | DMC2710 | |
| Package Type | SOT-563 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 0.7Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 0.8W | |
| Typical Gate Charge Qg @ Vgs | 0.6nC | |
| Forward Voltage Vf | 0.7V | |
| Maximum Gate Source Voltage Vgs | 6 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Dual | |
| Width | 1.1 mm | |
| Standards/Approvals | UL 94V-0, MIL-STD-202, RoHS, J-STD-020, AEC-Q101 | |
| Length | 1.55mm | |
| Height | 1.5mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101, AEC-Q100, AEC-Q200 | |
| Alles selecteren | ||
|---|---|---|
Merk DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type P, Type N | ||
Maximum Continuous Drain Current Id 800mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Series DMC2710 | ||
Package Type SOT-563 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 0.7Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 0.8W | ||
Typical Gate Charge Qg @ Vgs 0.6nC | ||
Forward Voltage Vf 0.7V | ||
Maximum Gate Source Voltage Vgs 6 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Dual | ||
Width 1.1 mm | ||
Standards/Approvals UL 94V-0, MIL-STD-202, RoHS, J-STD-020, AEC-Q101 | ||
Length 1.55mm | ||
Height 1.5mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101, AEC-Q100, AEC-Q200 | ||
- Land van herkomst:
- CN
The DiodesZetex complementary pair enhancement mode MOSFET is designed to minimize the on-state resistance yet maintain superior switching performance, making it ideal for high-efficiency power management application. Its gate-source voltage is 6 V with 0.46W thermal power dissipation.
Low input capacitance
Fast switching speed
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