DiodesZetex Dual DMNH6035 1 Type N-Channel MOSFET, 33 A, 60 V Enhancement, 8-Pin PowerDI5060 DMNH6035SPDW-13
- RS-stocknr.:
- 206-0097
- Fabrikantnummer:
- DMNH6035SPDW-13
- Fabrikant:
- DiodesZetex
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- RS-stocknr.:
- 206-0097
- Fabrikantnummer:
- DMNH6035SPDW-13
- Fabrikant:
- DiodesZetex
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 33A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | DMNH6035 | |
| Package Type | PowerDI5060 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 44mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 10nC | |
| Forward Voltage Vf | 0.75V | |
| Maximum Power Dissipation Pd | 68W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Dual | |
| Length | 4.9mm | |
| Standards/Approvals | No | |
| Height | 1.05mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | AEC-Q100, AEC-Q101, AEC-Q200 | |
| Alles selecteren | ||
|---|---|---|
Merk DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 33A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series DMNH6035 | ||
Package Type PowerDI5060 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 44mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 10nC | ||
Forward Voltage Vf 0.75V | ||
Maximum Power Dissipation Pd 68W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Dual | ||
Length 4.9mm | ||
Standards/Approvals No | ||
Height 1.05mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard AEC-Q100, AEC-Q101, AEC-Q200 | ||
The DiodesZetex 60V N- channel enhancement mode MOSFET is designed to minimize the on-state resistance yet maintain superior switching performance, making it ideal for high-efficiency power management application. Its gate-source voltage is 20 V with 2.4 W thermal power dissipation.
Rated to +175°C is ideal for high ambient temperature environment
Low Qg – minimises switching losses
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