DiodesZetex DMP2900 Type P-Channel MOSFET, 600 mA, 20 V Enhancement, 3-Pin SOT-323 DMP2900UW-7
- RS-stocknr.:
- 206-0113
- Fabrikantnummer:
- DMP2900UW-7
- Fabrikant:
- DiodesZetex
Momenteel niet beschikbaar
We weten niet of dit item nog op voorraad komt, RS is van plan dit binnenkort uit ons assortiment te halen.
- RS-stocknr.:
- 206-0113
- Fabrikantnummer:
- DMP2900UW-7
- Fabrikant:
- DiodesZetex
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | DiodesZetex | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 600mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-323 | |
| Series | DMP2900 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 750mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 0.3W | |
| Typical Gate Charge Qg @ Vgs | 0.7nC | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 2mm | |
| Height | 0.9mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101, AEC-Q100, AEC-Q200 | |
| Alles selecteren | ||
|---|---|---|
Merk DiodesZetex | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 600mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-323 | ||
Series DMP2900 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 750mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 0.3W | ||
Typical Gate Charge Qg @ Vgs 0.7nC | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 2mm | ||
Height 0.9mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101, AEC-Q100, AEC-Q200 | ||
- Land van herkomst:
- CN
The DiodesZetex 20V P- channel enhancement mode MOSFET is designed to minimize the on-state resistance yet maintain superior switching performance, making it ideal for high-efficiency power management application. Its gate-source voltage is 6V with 0.3 W thermal power dissipation.
Low on-resistance
Low input capacitance
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