DiodesZetex Dual DMT47 1 Type N-Channel MOSFET, 30.2 A, 40 V Enhancement, 8-Pin PowerDI3333
- RS-stocknr.:
- 206-0142
- Fabrikantnummer:
- DMT47M2LDV-7
- Fabrikant:
- DiodesZetex
Subtotaal (1 rol van 2000 eenheden)*
€ 682,00
(excl. BTW)
€ 826,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 15 september 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 2000 + | € 0,341 | € 682,00 |
*prijsindicatie
- RS-stocknr.:
- 206-0142
- Fabrikantnummer:
- DMT47M2LDV-7
- Fabrikant:
- DiodesZetex
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 30.2A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PowerDI3333 | |
| Series | DMT47 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.015Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.9V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 14.8W | |
| Typical Gate Charge Qg @ Vgs | 6.72nC | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Dual | |
| Length | 3.4mm | |
| Standards/Approvals | RoHS, UL 94V-0, J-STD-020, MIL-STD-202, AEC-Q101 | |
| Height | 0.85mm | |
| Width | 3.4 mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 30.2A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PowerDI3333 | ||
Series DMT47 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.015Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.9V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 14.8W | ||
Typical Gate Charge Qg @ Vgs 6.72nC | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Dual | ||
Length 3.4mm | ||
Standards/Approvals RoHS, UL 94V-0, J-STD-020, MIL-STD-202, AEC-Q101 | ||
Height 0.85mm | ||
Width 3.4 mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard AEC-Q101 | ||
- Land van herkomst:
- CN
The DiodesZetex 40V,8 pin dual N- channel enhancement mode MOSFET is designed to minimize the on-state resistance yet maintain superior switching performance, making it ideal for high-efficiency power management application. Its gate-source voltage is 20V with 2.34 W thermal power dissipation.
High conversion efficiency
Low RDS(ON) – minimizes on state losses
Fast switching speed
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