DiodesZetex DMT6006 Type N-Channel MOSFET, 98 A, 60 V Enhancement, 8-Pin PowerDI5060 DMT6006SPS-13
- RS-stocknr.:
- 206-0150
- Fabrikantnummer:
- DMT6006SPS-13
- Fabrikant:
- DiodesZetex
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 25 eenheden)*
€ 19,15
(excl. BTW)
€ 23,175
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending 975 stuk(s) vanaf 12 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 25 - 25 | € 0,766 | € 19,15 |
| 50 - 75 | € 0,752 | € 18,80 |
| 100 - 225 | € 0,654 | € 16,35 |
| 250 - 975 | € 0,638 | € 15,95 |
| 1000 + | € 0,622 | € 15,55 |
*prijsindicatie
- RS-stocknr.:
- 206-0150
- Fabrikantnummer:
- DMT6006SPS-13
- Fabrikant:
- DiodesZetex
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 98A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PowerDI5060 | |
| Series | DMT6006 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 6.2mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 2.45W | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 27.9nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 5.15 mm | |
| Length | 6.15mm | |
| Standards/Approvals | No | |
| Height | 0.9mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 98A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PowerDI5060 | ||
Series DMT6006 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 6.2mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 2.45W | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 27.9nC | ||
Maximum Operating Temperature 150°C | ||
Width 5.15 mm | ||
Length 6.15mm | ||
Standards/Approvals No | ||
Height 0.9mm | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The DiodesZetex 60V,8 pin N- channel enhancement mode MOSFET is designed to minimize the on-state resistance yet maintain superior switching performance, making it ideal for high-efficiency power management application. Its gate-source voltage is 20V with 2.45 W thermal power dissipation.
Low RDS(ON) – ensures on-state losses are minimized
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