DiodesZetex DMTH10 Type N-Channel MOSFET, 20.1 kA, 100 V Enhancement, 8-Pin PowerDI5060 DMTH10H4M5LPS-13
- RS-stocknr.:
- 206-0159
- Fabrikantnummer:
- DMTH10H4M5LPS-13
- Fabrikant:
- DiodesZetex
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 7,94
(excl. BTW)
€ 9,605
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- Plus verzending 4.965 stuk(s) vanaf 11 mei 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 1,588 | € 7,94 |
| 50 - 95 | € 1,396 | € 6,98 |
| 100 - 245 | € 1,362 | € 6,81 |
| 250 - 995 | € 1,326 | € 6,63 |
| 1000 + | € 1,292 | € 6,46 |
*prijsindicatie
- RS-stocknr.:
- 206-0159
- Fabrikantnummer:
- DMTH10H4M5LPS-13
- Fabrikant:
- DiodesZetex
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 20.1kA | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | PowerDI5060 | |
| Series | DMTH10 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 6.2mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Power Dissipation Pd | 2.7W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.9mm | |
| Length | 6.15mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 20.1kA | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type PowerDI5060 | ||
Series DMTH10 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 6.2mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Power Dissipation Pd 2.7W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Height 0.9mm | ||
Length 6.15mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The DiodesZetex 100V,8 pin N-channel enhancement mode MOSFET is designed to minimize the on-state resistance yet maintain superior switching performance, this device is ideal for use in notebook battery power management and load switch. Its gate-source voltage is 20V with 2.7 W thermal power dissipation.
Low on-resistance
Fast switching speed
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