Texas Instruments NexFET Type N-Channel MOSFET, 3 A, 30 V Enhancement, 8-Pin VSONP CSD17575Q3
- RS-stocknr.:
- 208-8480
- Fabrikantnummer:
- CSD17575Q3
- Fabrikant:
- Texas Instruments
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 10 eenheden)*
€ 10,82
(excl. BTW)
€ 13,09
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 22.810 stuk(s) vanaf 31 december 2025
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 40 | € 1,082 | € 10,82 |
| 50 - 90 | € 1,06 | € 10,60 |
| 100 - 240 | € 0,811 | € 8,11 |
| 250 - 990 | € 0,802 | € 8,02 |
| 1000 + | € 0,719 | € 7,19 |
*prijsindicatie
- RS-stocknr.:
- 208-8480
- Fabrikantnummer:
- CSD17575Q3
- Fabrikant:
- Texas Instruments
Specificaties
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Texas Instruments | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 3A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | VSONP | |
| Series | NexFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.3mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 108W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 3.4mm | |
| Height | 1mm | |
| Width | 3.4 mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Texas Instruments | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 3A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type VSONP | ||
Series NexFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.3mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 108W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 3.4mm | ||
Height 1mm | ||
Width 3.4 mm | ||
Automotive Standard No | ||
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