STMicroelectronics Type N-Channel MOSFET, 12 A, 600 V Enhancement, 3-Pin TO-252

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€ 2.552,50

(excl. BTW)

€ 3.087,50

(incl. BTW)

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RS-stocknr.:
210-8741
Fabrikantnummer:
STD15N60DM6
Fabrikant:
STMicroelectronics
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Merk

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

12A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

338mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

15.3nC

Forward Voltage Vf

1.6V

Maximum Gate Source Voltage Vgs

25 V

Maximum Power Dissipation Pd

110W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

2.4mm

Width

6.2 mm

Standards/Approvals

No

Length

6.6mm

Automotive Standard

No

The STMicroelectronics high-voltage N-channel Power MOSFET is part of the Mesh DM6 fast-recovery diode series. Compared with the previous Mesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

Fast-recovery body diode

Lower RDS(on) per area vs previous generation

Low gate charge, input capacitance and resistance

100% avalanche tested

Extremely high dv/dt ruggedness

Zener-protected

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