STMicroelectronics N-Channel MOSFET, 72 A, 650 V, 4-Pin TO-247-4 STW68N65DM6-4AG
- RS-stocknr.:
- 210-8749P
- Fabrikantnummer:
- STW68N65DM6-4AG
- Fabrikant:
- STMicroelectronics
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We weten niet of dit item nog op voorraad komt, RS is van plan dit binnenkort uit ons assortiment te halen.
- RS-stocknr.:
- 210-8749P
- Fabrikantnummer:
- STW68N65DM6-4AG
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current (Id) | 72 A | |
| Maximum Drain Source Voltage (Vds) | 650 V | |
| Pin Count | 4 | |
| Package Type | TO-247-4 | |
| Maximum Drain Source Resistance (Rds) | 39 mΩ | |
| Mount Type | Through Hole | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current (Id) 72 A | ||
Maximum Drain Source Voltage (Vds) 650 V | ||
Pin Count 4 | ||
Package Type TO-247-4 | ||
Maximum Drain Source Resistance (Rds) 39 mΩ | ||
Mount Type Through Hole | ||
The STMicroelectronics high-voltage N-channel Power MOSFET is part of the Mesh DM6 fast recovery diode series. Compared with the previous Mesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies andZVS phase-shift converters.
Designed for automotive applications
Fast-recovery body diode
Lower RDS(on) per area vs previous generation
Low gate charge, input capacitance and resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Excellent switching performance thanks to the extra driving source pin
Zener-protected