STMicroelectronics SCTWA40N120G2V-4 Type N-Channel MOSFET, 45 A, 1200 V, 3-Pin Hip-247 SCTWA40N120G2V-4
- RS-stocknr.:
- 212-2094
- Fabrikantnummer:
- SCTWA40N120G2V-4
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 16,08
(excl. BTW)
€ 19,46
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Laatste voorraad RS
- Laatste 14 stuk(s), klaar voor verzending vanaf een andere locatie
Aantal stuks | Per stuk |
|---|---|
| 1 - 4 | € 16,08 |
| 5 - 9 | € 15,74 |
| 10 + | € 14,77 |
*prijsindicatie
- RS-stocknr.:
- 212-2094
- Fabrikantnummer:
- SCTWA40N120G2V-4
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 45A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | SCTWA40N120G2V-4 | |
| Package Type | Hip-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 70mΩ | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Forward Voltage Vf | 3.3V | |
| Typical Gate Charge Qg @ Vgs | 61nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 277W | |
| Maximum Operating Temperature | 200°C | |
| Standards/Approvals | No | |
| Width | 21.1 mm | |
| Length | 15.9mm | |
| Height | 5.1mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 45A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series SCTWA40N120G2V-4 | ||
Package Type Hip-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 70mΩ | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Forward Voltage Vf 3.3V | ||
Typical Gate Charge Qg @ Vgs 61nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 277W | ||
Maximum Operating Temperature 200°C | ||
Standards/Approvals No | ||
Width 21.1 mm | ||
Length 15.9mm | ||
Height 5.1mm | ||
Automotive Standard No | ||
SiC MOSFET
The STMicroelectronics 650 V, 55 mΩ SCTH35N65G2V-7 STPOWER SiC MOSFET with a trench field-stop (TFS) IGBT of the same voltage rating and equivalent on-state resistance. The STPOWER SiC MOSFET exhibits significantly reduced switching losses, even at high temperatures. This enables designer to operate at very high switching frequencies, reducing the size of passive components for smaller form factors.
Very low switching losses
Low power losses at high temperatures
Higher operating temperature (up to 200 ˚C)
Body diode with no recovery losses
Easy to drive
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